CVE-2021-42114

Katalog CVE

CVSS 8.3 · High EPSS 3,0%

Kerentanan Improper Input Validation pada samsung ddr4 sdram firmware, samsung lddr4 firmware +4 lainnya. Skor CVSS 3.1 8.3 (High) menurut NVD.

Deskripsi (NVD)

Modern DRAM devices (PC-DDR4, LPDDR4X) are affected by a vulnerability in their internal Target Row Refresh (TRR) mitigation against Rowhammer attacks. Novel non-uniform Rowhammer access patterns, consisting of aggressors with different frequencies, phases, and amplitudes allow triggering bit flips on affected memory modules using our Blacksmith fuzzer. The patterns generated by Blacksmith were able to trigger bitflips on all 40 PC-DDR4 DRAM devices in our test pool, which cover the three major DRAM manufacturers: Samsung, SK Hynix, and Micron. This means that, even when chips advertised as Rowhammer-free are used, attackers may still be able to exploit Rowhammer. For example, this enables privilege-escalation attacks against the kernel or binaries such as the sudo binary, and also triggering bit flips in RSA-2048 keys (e.g., SSH keys) to gain cross-tenant virtual-machine access. We can confirm that DRAM devices acquired in July 2020 with DRAM chips from all three major DRAM vendors (Samsung, SK Hynix, Micron) are affected by this vulnerability. For more details, please refer to our publication.

Rincian

Terbit di NVD

16 November 2021

Terakhir diubah

17 Juni 2026

Status NVD

Modified

CVSS 3.1

8.3 (High), sumber NVD
CVSS:3.1/AV:A/AC:H/PR:N/UI:N/S:C/C:H/I:H/A:H · uraikan di kalkulator

Jenis kelemahan (CWE)

CWE-20: Improper Input Validation

EPSS (30 hari)

3,0% peluang dieksploitasi; lebih tinggi dari 86,9% CVE lain

Produk dan versi terdampak

> Data dari konfigurasi CPE di NVD.

Referensi dan perbaikan

• https://comsec.ethz.ch/research/dram/blacksmith/ exploit · advisory pihak ketiga
• https://comsec.ethz.ch/wp-content/files/blacksmith_sp22.pdf exploit · advisory pihak ketiga
• https://github.com/comsec-group/blacksmith exploit · advisory pihak ketiga